Component information
BCM857QASZ
Nexperia USA Inc. BCM857QASZ: Bipolar Transistor Arrays. Package / Case: 6-XFDFN Exposed Pad. Supplier Device Package: DFN1010B-6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- Nexperia USA Inc.
- Part Status
- Active
- Power - Max
- 350mW
- Frequency - Transition
- 175MHz
- Operating Temperature
- 150°C (TJ)
- Grade
- Automotive
- Transistor Type
- 2 PNP (Dual) Matched Pair
- Qualification
- AEC-Q101
- Current - Collector (Ic) (Max)
- 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 45V
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 5V
- Mounting Type
- Surface Mount
- Package / Case
- 6-XFDFN Exposed Pad
- Supplier Device Package
- DFN1010B-6
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BCM857
Documentation and references
Documentation can be discussed with your inquiry.
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