Component information
BCP5310MTWG
BCP5310MTWG component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mfr
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 63 @ 150mA, 2V
- Packaging
- Bulk
- Power - Max
- 875 mW
- Part Status
- Active
- Frequency - Transition
- 130MHz
- Transistor Type
- PNP
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 1 A
- Mounting Type
- Surface Mount, Wettable Flank
- Voltage - Collector Emitter Breakdown (Max)
- 80 V
- Package / Case
- 3-WDFN Exposed Pad
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 50mA, 500mA
- Supplier Device Package
- 3-WDFNW (2x2)
Documentation and references
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