Component information
BCR08PNE6327BTSA1
Infineon Technologies BCR08PNE6327BTSA1: Bipolar Transistor Arrays, Pre-Biased. Package / Case: 6-VSSOP, SC-88, SOT-363. Supplier Device Package: PG-SOT363-PO.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- Manufacturer
- Infineon Technologies
- Part Status
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA
- Frequency - Transition
- 170MHz
- Power - Max
- 250mW
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)
- 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Resistor - Base (R1)
- 2.2kOhms
- Resistor - Emitter Base (R2)
- 47kOhms
- Mounting Type
- Surface Mount
- Package / Case
- 6-VSSOP, SC-88, SOT-363
- Supplier Device Package
- PG-SOT363-PO
- Packaging
- Tape & Reel (TR)
- Base Product Number
- BCR08
Documentation and references
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