Component information
BCR112WH6327XTSA1
BCR112WH6327XTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 20 @ 5mA, 5V
- Manufacturer
- Infineon Technologies
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA
- Packaging
- Tape & Reel (TR)
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Part Status
- Obsolete
- Frequency - Transition
- 140 MHz
- Transistor Type
- NPN - Pre-Biased
- Power - Max
- 250 mW
- Current - Collector (Ic) (Max)
- 100 mA
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Package / Case
- SC-70, SOT-323
- Resistors Included
- R1 and R2
- Supplier Device Package
- PG-SOT323
- Resistor - Base (R1)
- 4.7 kOhms
- Base Product Number
- BCR112
- Resistor - Emitter Base (R2)
- 4.7 kOhms
Documentation and references
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