Component information
BCR191WE6327
Infineon Technologies BCR191WE6327: Single, Pre-Biased Bipolar Transistors. Package / Case: SC-70, SOT-323. Supplier Device Package: PG-SOT323-3-1.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Active
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 200 MHz
- Power - Max
- 250 mW
- Transistor Type
- PNP - Pre-Biased
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 100 mA
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistors Included
- R1 and R2
- Resistor - Base (R1)
- 22 kOhms
- Resistor - Emitter Base (R2)
- 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 5mA, 5V
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Supplier Device Package
- PG-SOT323-3-1
- Packaging
- Bulk
- Base Product Number
- BCR191
Documentation and references
Documentation can be discussed with your inquiry.
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