Component information
BCR198TE6327
Infineon Technologies BCR198TE6327: Single, Pre-Biased Bipolar Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: PG-SOT23-3-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Active
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 190 MHz
- Power - Max
- 200 mW
- Transistor Type
- PNP - Pre-Biased
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 100 mA
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistors Included
- R1 and R2
- Resistor - Base (R1)
- 47 kOhms
- Resistor - Emitter Base (R2)
- 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 5mA, 5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- PG-SOT23-3-3
- Packaging
- Bulk
- Base Product Number
- BCR198
Documentation and references
Documentation can be discussed with your inquiry.
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