Component information
BCR22PNH6327XTSA1
BCR22PNH6327XTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 5mA, 5V
- Manufacturer
- Infineon Technologies
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA
- Packaging
- Tape & Reel (TR)
- Frequency - Transition
- 130MHz
- Part Status
- Last Time Buy
- Power - Max
- 250mW
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 100mA
- Package / Case
- 6-VSSOP, SC-88, SOT-363
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Supplier Device Package
- PG-SOT363-PO
- Resistor - Base (R1)
- 22kOhms
- Base Product Number
- BCR22
- Resistor - Emitter Base (R2)
- 22kOhms
Documentation and references
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