Component information

BCR503E6327HTSA1

BCR503E6327HTSA1 component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors

Product attributes

Category
Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 50mA, 5V
Manufacturer
Infineon Technologies
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Current - Collector Cutoff (Max)
100nA (ICBO)
Part Status
Last Time Buy
Frequency - Transition
100 MHz
Transistor Type
NPN - Pre-Biased
Power - Max
330 mW
Current - Collector (Ic) (Max)
500 mA
Mounting Type
Surface Mount
Voltage - Collector Emitter Breakdown (Max)
50 V
Package / Case
TO-236-3, SC-59, SOT-23-3
Resistors Included
R1 and R2
Supplier Device Package
PG-SOT23
Resistor - Base (R1)
2.2 kOhms
Base Product Number
BCR503
Resistor - Emitter Base (R2)
2.2 kOhms

Documentation and references

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