Component information
BCV29H6327XTSA1
BCV29H6327XTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Power - Max
- 1 W
- Mfr
- Infineon Technologies
- Frequency - Transition
- 150MHz
- Packaging
- Tape & Reel (TR)
- Operating Temperature
- 150°C (TJ)
- Part Status
- Obsolete
- Grade
- Automotive
- Transistor Type
- NPN - Darlington
- Qualification
- AEC-Q101
- Current - Collector (Ic) (Max)
- 500 mA
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 30 V
- Package / Case
- TO-243AA
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 100µA, 100mA
- Supplier Device Package
- PG-SOT89
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Base Product Number
- BCV29
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 20000 @ 100mA, 5V
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ