Component information
BCW61BE6327HTSA1
BCW61BE6327HTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 180 @ 2mA, 5V
- Mfr
- Infineon Technologies
- Power - Max
- 330 mW
- Packaging
- Tape & Reel (TR)
- Frequency - Transition
- 250MHz
- Part Status
- Obsolete
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- PNP
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 100 mA
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Voltage - Collector Emitter Breakdown (Max)
- 32 V
- Supplier Device Package
- PG-SOT23
- Vce Saturation (Max) @ Ib, Ic
- 550mV @ 1.25mA, 50mA
- Base Product Number
- BCW61
- Current - Collector Cutoff (Max)
- 20nA (ICBO)
Documentation and references
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