Component information
BF 770A E6327
Infineon Technologies BF 770A E6327: Bipolar RF Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: PG-SOT23.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Obsolete
- Gain
- 9.5dB ~ 14.5dB
- Power - Max
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 30mA, 8V
- Current - Collector (Ic) (Max)
- 90mA
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Frequency - Transition
- 6GHz
- Noise Figure (dB Typ @ f)
- 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- PG-SOT23
- Packaging
- Tape & Reel (TR)
Documentation and references
Documentation can be discussed with your inquiry.
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