Component information
BF771E6765N
Infineon Technologies BF771E6765N: Bipolar RF Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: PG-SOT23-3-4.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Active
- Power - Max
- 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 30mA, 8V
- Current - Collector (Ic) (Max)
- 80mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Grade
- Automotive
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Qualification
- AEC-Q101
- Frequency - Transition
- 8GHz
- Noise Figure (dB Typ @ f)
- 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain
- 15dB
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- PG-SOT23-3-4
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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