Component information
BF888H6327XTSA1
BF888H6327XTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Power - Max
- 160mW
- Manufacturer
- Infineon Technologies
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 250 @ 25A, 3V
- Packaging
- Tape & Reel (TR)
- Current - Collector (Ic) (Max)
- 30mA
- Part Status
- Obsolete
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 4V
- Package / Case
- SC-82A, SOT-343
- Frequency - Transition
- 47GHz
- Supplier Device Package
- PG-SOT343-4-2
- Noise Figure (dB Typ @ f)
- 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
- Base Product Number
- BF888
- Gain
- 27dB
Documentation and references
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