Component information
BFG 19S E6327
Infineon Technologies BFG 19S E6327: Bipolar RF Transistors. Package / Case: TO-261-4, TO-261AA. Supplier Device Package: PG-SOT223-4.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Obsolete
- Power - Max
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 70mA, 8V
- Current - Collector (Ic) (Max)
- 210mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 15V
- Frequency - Transition
- 5.5GHz
- Noise Figure (dB Typ @ f)
- 2dB ~ 3dB @ 900MHz ~ 1.8GHz
- Gain
- 14dB ~ 8.5dB
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Supplier Device Package
- PG-SOT223-4
- Packaging
- Tape & Reel (TR)
- Base Product Number
- BFG 19
Documentation and references
Documentation can be discussed with your inquiry.
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