Component information
BFG 235 E6327
Infineon Technologies BFG 235 E6327: Bipolar RF Transistors. Package / Case: TO-261-4, TO-261AA. Supplier Device Package: PG-SOT223-4.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Obsolete
- Power - Max
- 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 75 @ 200mA, 8V
- Current - Collector (Ic) (Max)
- 300mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 15V
- Frequency - Transition
- 5.5GHz
- Noise Figure (dB Typ @ f)
- 1.7dB @ 900MHz
- Gain
- 12.5dB
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Supplier Device Package
- PG-SOT223-4
- Packaging
- Tape & Reel (TR)
- Base Product Number
- BFG 235
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ