Component information
BFG10/X,215
NXP USA Inc. BFG10/X,215: Bipolar RF Transistors. Package / Case: TO-253-4, TO-253AA. Supplier Device Package: SOT-143B.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- NXP USA Inc.
- Part Status
- Obsolete
- Power - Max
- 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 25 @ 50mA, 5V
- Current - Collector (Ic) (Max)
- 250mA
- Operating Temperature
- 175°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 8V
- Frequency - Transition
- 1.9GHz
- Gain
- 7dB
- Mounting Type
- Surface Mount
- Package / Case
- TO-253-4, TO-253AA
- Supplier Device Package
- SOT-143B
- Packaging
- Tape & Reel (TR)
- Base Product Number
- BFG10
Documentation and references
Documentation can be discussed with your inquiry.
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