Component information
BFG410W,135
NXP USA Inc. BFG410W,135: Bipolar RF Transistors. Package / Case: SC-82A, SOT-343. Supplier Device Package: CMPAK-4.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- NXP USA Inc.
- Part Status
- Obsolete
- Power - Max
- 54mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 10mA, 2V
- Current - Collector (Ic) (Max)
- 12mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 4.5V
- Frequency - Transition
- 22GHz
- Noise Figure (dB Typ @ f)
- 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
- Gain
- 21dB
- Mounting Type
- Surface Mount
- Package / Case
- SC-82A, SOT-343
- Supplier Device Package
- CMPAK-4
- Packaging
- Tape & Reel (TR)
- Base Product Number
- BFG41
Documentation and references
Documentation can be discussed with your inquiry.
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