Component information
BFG425W,115
BFG425W,115 component information and product attributes.
Product information
- Manufacturer
- NXP USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Power - Max
- 135mW
- Manufacturer
- NXP USA Inc.
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 25mA, 2V
- Packaging
- Tape & Reel (TR)
- Current - Collector (Ic) (Max)
- 30mA
- Part Status
- Obsolete
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 4.5V
- Package / Case
- SC-82A, SOT-343
- Frequency - Transition
- 25GHz
- Supplier Device Package
- CMPAK-4
- Noise Figure (dB Typ @ f)
- 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
- Base Product Number
- BFG42
- Gain
- 20dB
Documentation and references
Documentation can be discussed with your inquiry.
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