Component information
BFN26E6327HTSA1
BFN26E6327HTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 30mA, 10V
- Mfr
- Infineon Technologies
- Power - Max
- 360 mW
- Packaging
- Tape & Reel (TR)
- Frequency - Transition
- 70MHz
- Part Status
- Last Time Buy
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 200 mA
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Voltage - Collector Emitter Breakdown (Max)
- 300 V
- Supplier Device Package
- PG-SOT23
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 2mA, 20mA
- Base Product Number
- BFN26
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
Documentation and references
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