Component information
BFN39H6327XTSA1
Infineon Technologies BFN39H6327XTSA1: Single Bipolar Transistors. Package / Case: TO-261-4, TO-261AA. Supplier Device Package: PG-SOT223-4.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- Infineon Technologies
- Part Status
- Obsolete
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 30mA, 10V
- Power - Max
- 1.5 W
- Frequency - Transition
- 100MHz
- Transistor Type
- PNP
- Operating Temperature
- 150°C (TJ)
- Current - Collector (Ic) (Max)
- 200 mA
- Voltage - Collector Emitter Breakdown (Max)
- 300 V
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 2mA, 20mA
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Supplier Device Package
- PG-SOT223-4
- Packaging
- Tape & Reel (TR)
Documentation and references
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