Component information
BFP196E6327HTSA1
Infineon Technologies BFP196E6327HTSA1: Bipolar RF Transistors. Package / Case: TO-253-4, TO-253AA. Supplier Device Package: PG-SOT-143-3D.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Last Time Buy
- Power - Max
- 700mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 50mA, 8V
- Current - Collector (Ic) (Max)
- 150mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Frequency - Transition
- 7.5GHz
- Noise Figure (dB Typ @ f)
- 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Gain
- 10.5dB ~ 16.5dB
- Mounting Type
- Surface Mount
- Package / Case
- TO-253-4, TO-253AA
- Supplier Device Package
- PG-SOT-143-3D
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BFP196
Documentation and references
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