Component information
BFP410H6327XTSA1
Infineon Technologies BFP410H6327XTSA1: Bipolar RF Transistors. Package / Case: SC-82A, SOT-343. Supplier Device Package: PG-SOT343-4-2.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Last Time Buy
- Power - Max
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 13mA, 2V
- Current - Collector (Ic) (Max)
- 40mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 5V
- Frequency - Transition
- 25GHz
- Noise Figure (dB Typ @ f)
- 1.2dB @ 2GHz
- Gain
- 21.5dB
- Mounting Type
- Surface Mount
- Package / Case
- SC-82A, SOT-343
- Supplier Device Package
- PG-SOT343-4-2
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BFP410
Documentation and references
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