Component information
BFP520FE6327
Infineon Technologies BFP520FE6327: Bipolar RF Transistors. Package / Case: 4-SMD, Flat Leads. Supplier Device Package: 4-TSFP.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Active
- Gain
- 22.5dB
- Power - Max
- 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 20mA, 2V
- Current - Collector (Ic) (Max)
- 40mA
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 3.5V
- Frequency - Transition
- 45GHz
- Noise Figure (dB Typ @ f)
- 0.95dB @ 1.8GHz
- Mounting Type
- Surface Mount
- Package / Case
- 4-SMD, Flat Leads
- Supplier Device Package
- 4-TSFP
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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