Component information
BFP640E6327
Infineon Technologies BFP640E6327: Bipolar RF Transistors. Package / Case: SC-82A, SOT-343. Supplier Device Package: PG-SOT343-4.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Active
- Gain
- 24dB
- Power - Max
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 110 @ 30mA, 3V
- Current - Collector (Ic) (Max)
- 50mA
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 4.5V
- Frequency - Transition
- 40GHz
- Noise Figure (dB Typ @ f)
- 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
- Mounting Type
- Surface Mount
- Package / Case
- SC-82A, SOT-343
- Supplier Device Package
- PG-SOT343-4
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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