Component information
BFP640FESDH6327XTSA1
Infineon Technologies BFP640FESDH6327XTSA1: Bipolar RF Transistors. Package / Case: 4-SMD, Flat Leads. Supplier Device Package: 4-TSFP.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Obsolete
- Power - Max
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 110 @ 30mA, 3V
- Current - Collector (Ic) (Max)
- 50mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 4.7V
- Frequency - Transition
- 46GHz
- Noise Figure (dB Typ @ f)
- 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
- Gain
- 8B ~ 30.5dB
- Mounting Type
- Surface Mount
- Package / Case
- 4-SMD, Flat Leads
- Supplier Device Package
- 4-TSFP
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BFP640
Documentation and references
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