Component information
BFP740ESDH6327XTSA1
Infineon Technologies BFP740ESDH6327XTSA1: Bipolar RF Transistors. Package / Case: SC-82A, SOT-343. Supplier Device Package: PG-SOT343-4-2.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Last Time Buy
- Power - Max
- 160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 160 @ 25mA, 3V
- Current - Collector (Ic) (Max)
- 45mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 4.7V
- Frequency - Transition
- 45GHz
- Noise Figure (dB Typ @ f)
- 0.55dB ~ 1.8dB @ 150MHz ~ 10GHz
- Gain
- 8.5dB ~30.5dB
- Mounting Type
- Surface Mount
- Package / Case
- SC-82A, SOT-343
- Supplier Device Package
- PG-SOT343-4-2
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BFP740
Documentation and references
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