Component information
BFP842ESDH6327XTSA1
BFP842ESDH6327XTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Power - Max
- 120mW
- Manufacturer
- Infineon Technologies
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 150 @ 15mA, 2.5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Current - Collector (Ic) (Max)
- 40mA
- Part Status
- Last Time Buy
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 3.7V
- Package / Case
- SC-82A, SOT-343
- Frequency - Transition
- 60GHz
- Supplier Device Package
- PG-SOT343-4-2
- Noise Figure (dB Typ @ f)
- 0.65dB @ 3.5GHz
- Base Product Number
- BFP842
- Gain
- 26dB
Documentation and references
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