Component information
BFR106E6327HTSA1
BFR106E6327HTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Power - Max
- 700mW
- Manufacturer
- Infineon Technologies
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 70mA, 8V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Current - Collector (Ic) (Max)
- 210mA
- Part Status
- Last Time Buy
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 15V
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Frequency - Transition
- 5GHz
- Supplier Device Package
- PG-SOT23
- Noise Figure (dB Typ @ f)
- 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
- Base Product Number
- BFR106
- Gain
- 8.5dB ~ 13dB
Documentation and references
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