Component information
BFR183E6327HTSA1
Infineon Technologies BFR183E6327HTSA1: Bipolar RF Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: PG-SOT23.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Last Time Buy
- Power - Max
- 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 15mA, 8V
- Current - Collector (Ic) (Max)
- 65mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Frequency - Transition
- 8GHz
- Noise Figure (dB Typ @ f)
- 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
- Gain
- 17.5dB
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- PG-SOT23
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BFR183
Documentation and references
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