Component information
BFR360L3E6765XTMA1
Infineon Technologies BFR360L3E6765XTMA1: Bipolar RF Transistors. Package / Case: SC-101, SOT-883. Supplier Device Package: PG-TSLP-3-1.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Last Time Buy
- Power - Max
- 210mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 90 @ 15mA, 3V
- Current - Collector (Ic) (Max)
- 35mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 9V
- Frequency - Transition
- 14GHz
- Noise Figure (dB Typ @ f)
- 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
- Gain
- 11.5dB ~ 16dB
- Mounting Type
- Surface Mount
- Package / Case
- SC-101, SOT-883
- Supplier Device Package
- PG-TSLP-3-1
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BFR360
Documentation and references
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