Component information
BFR460L3E6327XTMA1
BFR460L3E6327XTMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Power - Max
- 200mW
- Manufacturer
- Infineon Technologies
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 90 @ 20mA, 3V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Current - Collector (Ic) (Max)
- 50mA
- Part Status
- Last Time Buy
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 5.8V
- Package / Case
- SC-101, SOT-883
- Frequency - Transition
- 22GHz
- Supplier Device Package
- PG-TSLP-3-1
- Noise Figure (dB Typ @ f)
- 1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz
- Base Product Number
- BFR460
- Gain
- 16dB
Documentation and references
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