Component information
BFR740L3RHE6327XTSA1
BFR740L3RHE6327XTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Power - Max
- 160mW
- Manufacturer
- Infineon Technologies
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 160 @ 25mA, 3V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Current - Collector (Ic) (Max)
- 30mA
- Part Status
- Last Time Buy
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 4.7V
- Package / Case
- SC-101, SOT-883
- Frequency - Transition
- 42GHz
- Supplier Device Package
- PG-TSLP-3
- Noise Figure (dB Typ @ f)
- 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
- Base Product Number
- BFR740
- Gain
- 24.5dB
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ