Component information
BFR750L3RHE6327
Infineon Technologies BFR750L3RHE6327: Bipolar RF Transistors. Package / Case: SC-101, SOT-883. Supplier Device Package: PG-TSLP-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Active
- Gain
- 21dB
- Power - Max
- 360mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 160 @ 60mA, 3V
- Current - Collector (Ic) (Max)
- 90mA
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 4.7V
- Frequency - Transition
- 37GHz
- Noise Figure (dB Typ @ f)
- 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
- Mounting Type
- Surface Mount
- Package / Case
- SC-101, SOT-883
- Supplier Device Package
- PG-TSLP-3
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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