Component information
BFR843EL3E6327XTSA1
Infineon Technologies BFR843EL3E6327XTSA1: Bipolar RF Transistors. Package / Case: 3-XFDFN. Supplier Device Package: PG-TSLP-3-10.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Last Time Buy
- Power - Max
- 125mW
- Current - Collector (Ic) (Max)
- 55mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 2.6V
- Gain
- 25.5dB
- Mounting Type
- Surface Mount
- Package / Case
- 3-XFDFN
- Supplier Device Package
- PG-TSLP-3-10
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BFR843
Documentation and references
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