Component information
BFS17SE6327HTSA1
Infineon Technologies BFS17SE6327HTSA1: Bipolar RF Transistors. Package / Case: 6-VSSOP, SC-88, SOT-363. Supplier Device Package: PG-SOT363-PO.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Obsolete
- Power - Max
- 280mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 40 @ 2mA, 1V
- Current - Collector (Ic) (Max)
- 25mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max)
- 15V
- Frequency - Transition
- 1.4GHz
- Noise Figure (dB Typ @ f)
- 3dB ~ 5dB @ 800MHz
- Mounting Type
- Surface Mount
- Package / Case
- 6-VSSOP, SC-88, SOT-363
- Supplier Device Package
- PG-SOT363-PO
- Packaging
- Tape & Reel (TR)
- Base Product Number
- BFS17
Documentation and references
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