Component information
BFS481H6327XTSA1
BFS481H6327XTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Power - Max
- 175mW
- Manufacturer
- Infineon Technologies
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 5mA, 8V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Current - Collector (Ic) (Max)
- 20mA
- Part Status
- Last Time Buy
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 2 NPN (Dual)
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Package / Case
- 6-VSSOP, SC-88, SOT-363
- Frequency - Transition
- 8GHz
- Supplier Device Package
- PG-SOT363-PO
- Noise Figure (dB Typ @ f)
- 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
- Base Product Number
- BFS481
- Gain
- 20dB
Documentation and references
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