Component information
BFU530AR
BFU530AR component information and product attributes.
Product information
- Manufacturer
- NXP USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 10mA, 8V
- Manufacturer
- NXP USA Inc.
- Current - Collector (Ic) (Max)
- 40mA
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Part Status
- Obsolete
- Grade
- Automotive
- Transistor Type
- NPN
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Mounting Type
- Surface Mount
- Frequency - Transition
- 11GHz
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Noise Figure (dB Typ @ f)
- 0.6dB @ 900MHz
- Supplier Device Package
- SOT-23 (TO-236AB)
- Gain
- 18dB
- Base Product Number
- BFU530
- Power - Max
- 450mW
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ