Component information
BFU530AVL
NXP USA Inc. BFU530AVL: Bipolar RF Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: SOT-23 (TO-236AB).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- NXP USA Inc.
- Part Status
- Obsolete
- Power - Max
- 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 10mA, 8V
- Current - Collector (Ic) (Max)
- 40mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Frequency - Transition
- 11GHz
- Noise Figure (dB Typ @ f)
- 1.1dB @ 1.8GHz
- Gain
- 12dB
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- SOT-23 (TO-236AB)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BFU530
Documentation and references
Documentation can be discussed with your inquiry.
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