Component information
BFU550R
BFU550R component information and product attributes.
Product information
- Manufacturer
- NXP USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 15mA, 8V
- Manufacturer
- NXP USA Inc.
- Current - Collector (Ic) (Max)
- 50mA
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Part Status
- Obsolete
- Grade
- Automotive
- Transistor Type
- NPN
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Mounting Type
- Surface Mount
- Frequency - Transition
- 11GHz
- Package / Case
- TO-253-4, TO-253AA
- Noise Figure (dB Typ @ f)
- 0.7dB @ 900MHz
- Supplier Device Package
- SOT-143B
- Gain
- 21dB
- Base Product Number
- BFU550
- Power - Max
- 450mW
Documentation and references
Documentation can be discussed with your inquiry.
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