Component information
BFU580GX
NXP USA Inc. BFU580GX: Bipolar RF Transistors. Package / Case: TO-261-4, TO-261AA. Supplier Device Package: SC-73.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- NXP USA Inc.
- Part Status
- Obsolete
- Power - Max
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 30mA, 8V
- Current - Collector (Ic) (Max)
- 60mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Frequency - Transition
- 11GHz
- Noise Figure (dB Typ @ f)
- 1.4dB @ 1.8GHz
- Gain
- 10.5dB
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Supplier Device Package
- SC-73
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BFU580
Documentation and references
Documentation can be discussed with your inquiry.
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