Component information
BFU660F,115
NXP USA Inc. BFU660F,115: Bipolar RF Transistors. Package / Case: SOT-343F. Supplier Device Package: 4-DFP.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- NXP USA Inc.
- Part Status
- Obsolete
- Power - Max
- 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 90 @ 10mA, 2V
- Current - Collector (Ic) (Max)
- 60mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 5.5V
- Frequency - Transition
- 21GHz
- Noise Figure (dB Typ @ f)
- 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
- Gain
- 12dB ~ 21dB
- Mounting Type
- Surface Mount
- Package / Case
- SOT-343F
- Supplier Device Package
- 4-DFP
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BFU660
Documentation and references
Documentation can be discussed with your inquiry.
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