Component information
BFU725F/N1,115
NXP USA Inc. BFU725F/N1,115: Bipolar RF Transistors. Package / Case: SOT-343 Reverse Pinning. Supplier Device Package: 4-SO.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- NXP USA Inc.
- Part Status
- Obsolete
- Power - Max
- 136mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 160 @ 10mA, 2V
- Current - Collector (Ic) (Max)
- 40mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 2.8V
- Frequency - Transition
- 55GHz
- Noise Figure (dB Typ @ f)
- 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
- Gain
- 10dB ~ 24dB
- Mounting Type
- Surface Mount
- Package / Case
- SOT-343 Reverse Pinning
- Supplier Device Package
- 4-SO
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BFU725
Documentation and references
Documentation can be discussed with your inquiry.
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