Component information
BFU730F,115
NXP USA Inc. BFU730F,115: Bipolar RF Transistors. Package / Case: SOT-343F. Supplier Device Package: 4-DFP.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- NXP USA Inc.
- Part Status
- Obsolete
- Power - Max
- 197mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 205 @ 2mA, 2V
- Current - Collector (Ic) (Max)
- 30mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 2.8V
- Frequency - Transition
- 55GHz
- Noise Figure (dB Typ @ f)
- 0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
- Mounting Type
- Surface Mount
- Package / Case
- SOT-343F
- Supplier Device Package
- 4-DFP
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BFU730
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ