Component information
BFU730LXZ
NXP USA Inc. BFU730LXZ: Bipolar RF Transistors. Package / Case: 3-XFDFN. Supplier Device Package: DFN1006C-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- NXP USA Inc.
- Part Status
- Obsolete
- Gain
- 15.8dB
- Power - Max
- 160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 205 @ 2mA, 3V
- Current - Collector (Ic) (Max)
- 30mA
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 3V
- Frequency - Transition
- 53GHz
- Noise Figure (dB Typ @ f)
- 0.75dB @ 6GHz
- Mounting Type
- Surface Mount
- Package / Case
- 3-XFDFN
- Supplier Device Package
- DFN1006C-3
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BFU730
Documentation and references
Documentation can be discussed with your inquiry.
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