Component information
BFY193PZZZA1
Infineon Technologies BFY193PZZZA1: Bipolar RF Transistors. Package / Case: MICRO-X1. Supplier Device Package: MICRO-X1.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Infineon Technologies
- Part Status
- Obsolete
- Gain
- 12.5dB ~ 13.5dB
- Power - Max
- 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 30mA, 8V
- Current - Collector (Ic) (Max)
- 80mA
- Transistor Type
- NPN
- Operating Temperature
- 200°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Frequency - Transition
- 7.5GHz
- Noise Figure (dB Typ @ f)
- 2.3dB ~ 2.9dB @ 2GHz
- Mounting Type
- Surface Mount
- Package / Case
- MICRO-X1
- Supplier Device Package
- MICRO-X1
- Packaging
- Box
Documentation and references
Documentation can be discussed with your inquiry.
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