Component information
BSB012NE2LX
BSB012NE2LX component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Rds On (Max) @ Id, Vgs
- 1.2mOhm @ 30A, 10V
- Mfr
- Infineon Technologies
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Series
- OptiMOS™
- Gate Charge (Qg) (Max) @ Vgs
- 67 nC @ 10 V
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±20V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 4900 pF @ 12 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.8W (Ta), 57W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 25 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 37A (Ta), 170A (Tc)
- Supplier Device Package
- MG-WDSON-2, CanPAK M™
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- 3-WDSON
Documentation and references
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