BSC010NE2LSIATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™

Part Status

Not For New Designs

Rds On (Max) @ Id, Vgs

1.05mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

59 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4200 pF @ 12 V

FET Type

N-Channel

Power Dissipation (Max)

2.5W (Ta), 96W (Tc)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25 V

Current - Continuous Drain (Id) @ 25°C

38A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-7

Package / Case

8-PowerTDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

BSC010