Component information

BSC0504NSIATMA1

Infineon Technologies BSC0504NSIATMA1: Single FETs, MOSFETs. Package / Case: 8-PowerTDFN. Supplier Device Package: PG-TDSON-8-6.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Infineon Technologies
Series
OptiMOS™
Part Status
Active
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
960 pF @ 15 V
Power Dissipation (Max)
2.5W (Ta), 30W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
21A (Ta), 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.7mOhm @ 30A, 10V
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-6
Package / Case
8-PowerTDFN
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
BSC0504

Documentation and references

Manufacturer document ↗

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