Component information
BSC105N15LS5ATMA1
Infineon Technologies BSC105N15LS5ATMA1: Single FETs, MOSFETs. Package / Case: 8-PowerTDFN. Supplier Device Package: PG-TDSON-8.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- OptiMOS™ 5
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 10.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id
- 2.3V @ 91µA
- Gate Charge (Qg) (Max) @ Vgs
- 23 nC @ 4.5 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 3000 pF @ 75 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.5W (Ta), 125W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 150 V
- Current - Continuous Drain (Id) @ 25°C
- 10.7A (Ta), 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TDSON-8
- Package / Case
- 8-PowerTDFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ