BSC112N06LDATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Infineon Technologies

Series

OptiMOS™ T2

Part Status

Active

Rds On (Max) @ Id, Vgs

11.2mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

2.2V @ 28µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

4020pF @ 30V

Power - Max

65W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Configuration

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Supplier Device Package

PG-TDSON-8-4

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

BSC112